Cypress Semiconductor MoBL CY62126EV30 Manual de usuario descargar pdf (Pagina 9)

CY62126EV30 MoBL



Document #: 38-05486 Rev. *H Page 9 of 16

Figure 7. Write Cycle No. 1 (WE

controlled)

[19, 20, 21]

Figure 8. Write Cycle No. 2 (CE controlled)

[

, 20, 21]

Switching Waveforms (continued)

PWE

HZOE

DATA

NOTE 22

SCE

DATA I/O

ADDRESS

BHE/BLE

PWE

SCE

HZOE

DATA

ADDRESS

DATA I/O

BHE/BLE

NOTE 22

Notes

19. The internal write time of the memory is defined by the overlap of WE

, CE

= V

, BHE, BLE or both = V

. All signals must be active to initiate a write and any of

these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.

20. Data I/O is high impedance if OE

= V

21. If CE

goes high simultaneously with WE = V

, the output remains in a high impedance state.

22. During this period, the I/Os are in output state. Do not apply input signals.

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Cypress Semiconductor MoBL CY62126EV30 Manual de usuario Pagina 9