Cypress Semiconductor CY8C24894 Especificaciones descargar pdf (Pagina 13)

CY8C24894

Document Number: 001-53754 Rev. *F Page 13 of 50

Absolute Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested.

Operating Temperature

Table 3. Absolute Maximum Ratings

Symbol Description Min Typ Max Units Notes

STG

Storage temperature –55 25 +100 C Higher storage temperatures

reduce data retention time.

Recommended storage

temperature is +25 C ± 25 C.

Time spent in storage at a

temperature greater than 65 °C

counts toward the Flash

electrical specification in Table 16

on page 26.

BAKETEMP

Bake temperature – 125 See

package

label

C

BAKETIME

Bake time See

package

label

– 72 Hours

Ambient temperature with power applied –40 – +85 C

Supply voltage on V

relative to V

–0.5 – +6.0 V

DC input voltage V

– 0.5 – V

+ 0.5 V

IO2

DC voltage applied to tri-state V

– 0.5 – V

+ 0.5 V

MIO

Maximum current into any port pin –25 – +50 mA

MAIO

Maximum current into any port pin

configured as analog driver

–50 – +50 mA

ESD Electro static discharge voltage 2000 – – V Human Body Model ESD.

LU Latch-up current – – 200 mA

Table 4. Operating Temperature

Symbol Description Min Typ Max Units Notes

Ambient temperature –40 – +85 C

Junction temperature –40 – +100 C The temperature rise from ambient

to junction is package specific. See

Table 28 on page 35. The user must

limit the power consumption to

comply with this requirement.

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