
CY7C1361V25
CY7C1363V25
CY7C1365V25
PRELIMINARY
6
Pin Definitions (119-Ball BGA)
Name I/O Description
A0
A1
A
Input-
Synchronous
Address Inputs used to select one of the address locations. Sampled at the
rising edge of the CLK if ADSP
or ADSC is active LOW, and CE
1
,
CE
2
, and
CE
3
are sampled active. A
[1:0]
feed the 2-bit counter.
BW
a
BW
b
BW
c
BW
d
Input-
Synchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte
writes to the SRAM. Sampled on the rising edge of CLK.
GW Input-
Synchronous
Global Write Enable Input, active LOW. When asserted LOW on the rising edge
of CLK, a global write is conducted (ALL bytes are written, regardless of the
values on BW
a,b,c,d
and BWE).
BWE Input-
Synchronous
Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This
signal must be asserted LOW to conduct a byte write.
CLK Input-Clock Clock Input. Used to capture all synchronous inputs to the device. Also used
to increment the burst counter when ADV
is asserted LOW, during a burst
operation.
CE
1
Input-
Synchronous
Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
2
and CE
3
to select/deselect the device. ADSP is ignored
if CE
1
is HIGH.
CE
2
Input-
Synchronous
Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used
in conjunction with CE
1
and CE
3
to select/deselect the device. This pin will be
used for address expansion to the next density SRAM.
CE
3
Input-
Synchronous
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and
CE
2
to select/deselect the device.
OE Input-
Asynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of the
I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH,
I/O pins are three-stated, and act as input data pins. OE
is masked during the
first clock of a read cycle when emerging from a deselected state.
ADV Input-
Synchronous
Advance Input signal, sampled on the rising edge of CLK. When asserted, it
automatically increments the address in a burst cycle.
ADSP Input-
Synchronous
Address Strobe from Processor, sampled on the rising edge of CLK. When
asserted LOW, A is captured in the address registers. A
[1:0]
are also loaded
into the burst counter. When ADSP
and ADSC are both asserted, only ADSP
is recognized. ASDP
is ignored when CE
1
is deasserted HIGH.
ADSC Input-
Synchronous
Address Strobe from Controller, sampled on the rising edge of CLK. When
asserted LOW, A
[x:0]
is captured in the address registers. A
[1:0]
are also loaded
into the burst counter. When ADSP
and ADSC are both asserted, only ADSP
is recognized.
MODE Input-
Static
Selects burst order. When tied to GND selects linear burst sequence. When
tied to V
DDQ
or left floating selects interleaved burst sequence. This is a strap
pin and should remain static during device operation.
ZZ Input-
Asynchronous
ZZ “sleep” Input. This active HIGH input places the device in a non-time critical
“sleep” condition with data integrity preserved.
NC,DQ
a
NC,DQ
b
NC,DQ
c
NC,DQ
d
I/O-
Synchronous
Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register
that is triggered by the rising edge of CLK. As outputs, they deliver the data
contained in the memory location specified by A during the previous clock rise
of the read cycle. The direction of the pins is controlled by OE
. When OE is
asserted LOW, the pins behave as outputs. When HIGH, DQ
x
and DP
x
are
placed in a three-state condition.
On the CY7C1365 SRAM, these are not connect pins.
Comentarios a estos manuales