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Cypress Semiconductor enCoRe CY7C604XX Manual de usuario Pagina 19

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CY7C603xx
Document #: 38-16018 Rev. *D Page 19 of 29
DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 3.0V to 3.6V
and 0°C <
T
A
< 70°C, or 2.4V to 3.0V and 0°C < T
A
< 70°C, respectively. Typical parameters apply to 3.3V, or 2.7V at 25°C and
are for design guidance only.
Table 16.DC Programming Specifications
Parameter Description Min. Typ. Max. Unit Notes
Vdd
IWRITE
Supply Voltage for Flash Write Operations 2.70 – – V
I
DDP
Supply Current During Programming or Verify – 5 25 mA
V
ILP
Input Low Voltage During Programming or Verify – – 0.8 V
V
IHP
Input High Voltage During Programming or Verify 2.1 – – V
I
ILP
Input Current when Applying Vilp to P1[0] or P1[1]
During Programming or Verify
– – 0.2 mA Driving internal pull down
resistor.
I
IHP
Input Current when Applying Vihp to P1[0] or P1[1]
During Programming or Verify
– – 1.5 mA Driving internal pull down
resistor.
V
OLV
Output Low Voltage During Programming or Verify – – Vss +
0.75
V
V
OHV
Output High Voltage During Programming or Verify Vdd – 1.0 – Vdd V
Flash
ENPB
Flash Endurance (per block) 50,000 – – – Erase/write cycles per block.
Flash
ENT
Flash Endurance (total)
[7]
1,800,000 – – – Erase/write cycles.
Flash
DR
Flash Data Retention 10 – – Years
Note
7. A maximum of 36 x 50,000 block endurance cycles is allowed. This may be balanced between operations on 36x1 blocks of 50,000 maximum cycles each, 36x2
blocks of 25,000 maximum cycles each, or 36x4 blocks of 12,500 maximum cycles each (to limit the total number of cycles to 36x50,000 and that no single block
ever sees more than 50,000 cycles).
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