
Document Number: 001-74592 Rev. *B Page 19 of 29
I
SB3
Automatic CE Power-down
Current – CMOS Inputs
V
DD
= Max., Device Deselected,
V
IN
0.3 V or V
IN
> V
DDQ
– 0.3 V,
f = f
MAX
= 1/t
CYC
6-ns cycle,
166 MHz
– 100 mA
I
SB4
Automatic CE Power-down
Current – TTL Inputs
V
DD
= Max., Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = 0
6-ns cycle,
166 MHz
– 40 mA
Electrical Characteristics (continued)
Over the Operating Range
Parameter
[12, 13]
Description Test Conditions Min Max Unit
Capacitance
Parameter
[14]
Description Test Conditions
165-ball FBGA
Max.
Unit
C
IN
Input capacitance T
A
= 25 °C, f = 1 MHz, V
DD
= 3.3 V, V
DDQ
= 2.5 V 5 pF
C
CLK
Clock input capacitance 5pF
C
I/O
Input/Output capacitance 7pF
Thermal Resistance
Parameter
[14]
Description Test Conditions
165-ball FBGA
Package
Unit
JA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51
16.8 C/W
JC
Thermal resistance
(junction to case)
3 C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
OUTPUT
R = 317
R = 351
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.5V
3.3V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
OUTPUT
R = 1667
R =1538
5pF
INCLUDING
JIG AND
SCOPE
(a) (b)
OUTPUT
R
L
= 50
Z
0
= 50
V
T
= 1.25V
2.5V
ALL INPUT PULSES
V
DDQ
GND
90%
10%
90%
10%
1 ns
1 ns
(c)
3.3 V I/O Test Load
2.5 V I/O Test Load
Note
14. Tested initially and after any design or process change that may affect these parameters.
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