CY7C1360V25
CY7C1362V25
CY7C1364V25
PRELIMINARY
20
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage on V
DD
Relative to GND.........−0.3V to +3.6V
DC Voltage Applied to Outputs
in High Z State
[8]
.....................................−0.5V to V
DDQ
+ 0.5V
DC Input Voltage
[8]
..................................−0.5V to V
DDQ
+ 0.5V
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Note:
8. Minimum voltage equals –2.0V for pulse durations of less than 20 ns.
9. T
A
is the temperature.
Operating Range
Range
Ambient
Temperature
[9]
V
DD
/V
DDQ
Com’l 0
°
C to +70
°
C 2.5V ± 5%
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
I/O Supply Voltage 2.375 2.625 V
V
OH
Output HIGH Voltage V
DD
= Min., I
OH
= −1.0 mA 2.0 V
V
OL
Output LOW Voltage V
DD
= Min., I
OL
= 1.0 mA 0.2 V
V
IH
Input HIGH Voltage 1.7 V
DD
+ 0.3V
V
V
IL
Input LOW Voltage
[8]
−0.3
0.7 V
I
X
Input Load Current
except ZZ and MODE
GND ≤ V
I
≤ V
DDQ
−5
5
µA
I
ZZ
Input Current of MODE
−30
30
µA
Input Current of ZZ Input = V
SS
−5 µA
I
OZ
Output Leakage
Current
GND ≤ V
I
≤ V
DDQ,
Output Disabled
−2
2
µA
I
DD
V
DD
Operating Supply
Current
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
5.0-ns cycle, 200 MHz 450 mA
6.0-ns cycle, 166 MHz 400 mA
7.5-ns cycle, 133 MHz 350 mA
10-ns cycle, 100 MHz 325 mA
I
SB1
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
f = f
MAX
= 1/t
CYC
5.0-ns cycle, 200 MHz 90 mA
6.0-ns cycle, 166 MHz 80 mA
7.5-ns cycle, 133 MHz 70 mA
10-ns cycle, 100 MHz 65 mA
I
SB2
Automatic CS
Power-Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected, V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V, f = 0
10 mA
I
SB3
Automatic CS
Power-Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected, or
V
IN
≤ 0.3V or V
IN
> V
DDQ
– 0.3V
f = f
MAX
= 1/t
CYC
5.0-ns cycle, 200 MHz 45 mA
6.0-ns cycle, 166 MHz 40 mA
7.5-ns cycle, 133 MHz 35 mA
10-ns cycle, 100 MHz 30 mA
I
SB4
Automatic CS
Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = 0
25 mA
(53 paginas)
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