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PRELIMINARY
256K x 36/256K x 32/512K x 18 Pipelined SRAM
CY7C1360V25
CY7C1362V25
CY7C1364V25
Cypress Semiconductor Corporation
3901 North First Street San Jose CA 95134 408-943-2600
December 3, 1999
Features
Supports 200-MHz bus
Fully registered inputs and outputs for pipelined
operation
Single 2.5V power supply
Fast clock-to-output times
3.1 ns (for 200-MHz device)
3.5 ns (for 166-MHz device)
4.0 ns (for 133-MHz device
5.0 ns (for 100-MHz device
User-selectable burst counter supporting Intel®
Pentium® interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed writes
Asynchronous output enable
Available as a 100-pin TQFP or 119 BGA
“ZZ” Sleep Mode option and Stop Clock option
Functional Description
The CY7C1360V25, CY7C1364V25 and CY7C1362V25 are
2.5V, 256K x 36, 256K x 32 and 512K x 18 synchronous-pipe-
lined cache SRAM, respectively. They are designed to support
zero wait state secondary cache with minimal glue logic.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. Max-
imum access delay from the clock rise is 3.1 ns (200-MHz
device).
The CY7C1360V25/CY7C1364V25/CY7C1362V25 supports
either the interleaved burst sequence used by the Intel Pen-
tium processor or a linear burst sequence used by processors
such as the PowerPC™. The burst sequence is selected
through the MODE pin. Accesses can be initiated by assert-
ing either the Processor Address Strobe (ADSP
) or the Con-
troller Address Strobe (ADSC
) at clock rise. Address advance-
ment through the burst sequence is controlled by the ADV
input. A 2-bit on-chip wraparound burst counter captures the
first address in a burst sequence and automatically increments
the address for the rest of the burst access.
Byte write operations are qualified with the Byte Write Select
(BW
a,b,c,d
for 1360V25/1364V25 and BW
a,b
for 1362V25) in-
puts. A Global Write Enable (GW
) overrides all byte write in-
puts and writes data to all four bytes. All writes are conducted
with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE
) provide for easy bank se-
lection and output three-state control. In order to provide prop-
er data during depth expansion, OE
is masked during the first
clock of a read cycle when emerging from a deselected state.
Intel and Pentium are registered trademarks of Intel Corporation.
PowerPC is a trademark of IBM Corporation.
CLK
A
x
GW
BWE
BW
x
CE
1
CE
CE
2
OE
OOUTPUT
256Kx36/
MEMORY
ARRAY
CLK
Logic Block Diagram
DQ
x
Data-In REG.
Q
D
CE
CONTROL
and WRITE
LOGIC
3
REGISTERS
and LOGIC
ADV
DP
x
MODE
1360V25 1362V25
A
X
512Kx18
DQ
X
DP
X
BW
X
A
[17:0]
A
[18:0]
DQ
a,b,c,d
DQ
a,b
DP
a,b,c,d
DP
a,b
BW
a,b,c,d
BW
a,b
ADSP
ADSC
ZZ
1364V25
A
[18:0]
DQ
a,b
NC
BW
a,b
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Indice de contenidos

Pagina 1 - CY7C1364V25

PRELIMINARY 256K x 36/256K x 32/512K x 18 Pipelined SRAM CY7C1360V25CY7C1362V25CY7C1364V25Cypress Semiconductor Corporation• 3901 North First Street

Pagina 2

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY10Cycle Description[1, 2, 3]Next Cycle Add. Used ZZ CE3CE2CE1ADSP ADSC ADV OE DQ WriteUnselected None L X

Pagina 3

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY11Write Cycle Description[1, 2, 3]Function (1360/1364) GW BWE BWdBWcBWbBWaRead 11XXXXRead 101111Write Byte

Pagina 4

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY12IEEE 1149.1 Serial Boundary Scan (JTAG)The CY7C1360/62 incorporates a serial boundary scan TestAccess Po

Pagina 5

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY13SRAM and cannot preload the Input or Output buffers. TheSRAM does not implement the 1149.1 commands EXTE

Pagina 6

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY14TAP Controller State DiagramTEST-LOGICRESETTEST-LOGIC/IDLESELECTDR-SCANCAPTURE-DRSHIFT-DREXIT1-DRPAUSE-D

Pagina 7

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY15TAP Controller Block Diagram0012..293031Boundary Scan RegisterIdentification Register012...x012Instruct

Pagina 8

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY16TAP AC Switching Characteristics Over the Operating Range[6, 7]Parameters Description Min. Max. UnittTCY

Pagina 9

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY17TAP Timing and Test Conditions(a)TDOCL=20 pFZ0=50ΩGND1.25VTest ClockTest Mode SelectTCKTMSTest Data-InTD

Pagina 10 - PRELIMINARY

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY18Identification Register DefinitionsInstruction Field Value DescriptionRevision Number(31:28)TBD Reserved

Pagina 11

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY19Boundary Scan OrderBit #Signal NameBump IDBit #Signal NameBump ID1 TBD TBD 36 TBD TBD2 TBD TBD 37 TBD TB

Pagina 12

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY2Pin ConfigurationsAAAAA1A0DNUDNUVSSVDDDNUAAAAAAAANC,DQPbDQbDQbVDDQVSSQDQbDQbDQbDQbVSSQVDDQDQbDQbVSSNCVDDZ

Pagina 13

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY20Maximum Ratings(Above which the useful life may be impaired. For user guide-lines, not tested.)Storage T

Pagina 14

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY21Capacitance[10]Parameter Description Test Conditions Max. UnitCIN Input Capacitance TA = 25°C, f = 1 M

Pagina 15

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY22Switching Characteristics Over the Operating Range[12, 13, 14]-200 -166 -133 -100Parameter DescriptionMi

Pagina 16

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY231Switching Waveforms Write Cycle Timing[15, 16]Notes:15. WE is the combination of BWE, BWx, and GW to de

Pagina 17

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY24Read Cycle Timing[15, 17]Note:17. RDx stands for Read Data from Address X.Switching Waveforms (continue

Pagina 18

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY25Read/Write Cycle Timing[15, 16, 17]Switching Waveforms (continued)ADSPCLKADSCADVADDCE1OEGWWECE2CE31aDat

Pagina 19

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY26Notes:18. Device originally deselected.19. CE is the combination of CE2 and CE3. All chip selects need t

Pagina 20

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY27Switching Waveforms (continued)OEThree-StateI/OstEOHZtEOVtEOLZOE Switching Waveforms

Pagina 21

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY28Switching Waveforms (continued)ADSPCLKADSCCE1CE3 LOW HIGHZZtZZStZZRECIDDIDD(active)Three-stateI/O’sNote

Pagina 22

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY29Ordering InformationSpeed(MHz)Ordering CodePackageNamePackage TypeOperatingRange200 CY7C1360V25-200AC A1

Pagina 23

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY3Pin Configurations (continued)2345671ABCDEFGHJKLMNPRTUVDDQNCNCNC,DQPcDQcDQdDQcDQdAA AAADSP VDDQCE2ADQcVDD

Pagina 24

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY30Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A10151-85050-A

Pagina 25

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY© Cypress Semiconductor Corporation, 1999. The information contained herein is subject to change without

Pagina 26

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY4Selection Guide7C1360V25-2007C1364V25-2007C1362V25-2007C1360V25-1667C1364V25-1667C1362V25-1667C1360V25-13

Pagina 27

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY585 85 ADSC Input-SynchronousAddress Strobe from Controller, sampled on the ris-ing edge of CLK. When asse

Pagina 28 - NotefjdfdhfdjfdfjdjdjdjNo

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY6Pin Definitions (119-Ball BGA) x18 Pin Locations x36 Pin Locations Name I/O Description4P, 4N, 2A, 3A, 5A

Pagina 29

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY73R 3R MODE Input-StaticSelects Burst Order. When tied to GND selects lin-ear burst sequence. When tied to

Pagina 30

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY8IntroductionFunctional OverviewAll synchronous inputs pass through input registers controlledby the risin

Pagina 31 - Revision History

CY7C1360V25CY7C1362V25CY7C1364V25PRELIMINARY9Asserting ADV LOW at clock rise will automatically incrementthe burst counter to the next address in the

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